The GHSD6P0100BT is a typical 100W (P3dB) at +50 V transistor，discrete GaN on SiC HEMT. Ideal for applications in Base station, radar and remote radio heads in the frequency range from DC to 6G GHz. Available in ceramic outline.

⚫ Frequency: DC to 6 GHz 

⚫ Output Power(P3dB)1 : 100 W 

⚫ Linear Gain1 : 20.8 dB

⚫ Typical DE(P3dB)1 : 73.5 %

⚫ Operating Voltage: 50 V 

⚫ Low thermal resistance package 

⚫ CW and Pulse capable Note 1: @ 2.6 GHz