SDSX has recently launched four 4W series GaAs high - efficiency power amplifier chips, with frequencies covering:
1.8 - 1.9GHz (Model GSP1P904AL),
2.1 - 2.2GHz (Model GSP2P204AL),
2.3 - 2.4GHz (Model GSP2P404AL),
3.3 - 3.6GHz (Model GSP3P604AL).
These chips are mainly used for the final stage of FDD/TDD 3G/4G/5G communication small base stations, micro - stations and macro - stations, mMIMO base station drivers, and wireless general - purpose scenarios.
The performance of these chips has reached an excellent level in the industry. They use GaAs HBT process, 5V power supply, and are internally matched to 50 ohms at the input and output. The Doherty architecture is applied to achieve high efficiency. These chips also feature high gain, wide IBW processing capability, and high open - loop linearity. They can achieve high closed - loop linearity by combining with an external general DPD system. The chips use a 5*5mm 16 - pin QFN package, which is compatible with mainstream industry solutions. They cover the mainstream frequency bands for communication small - station scenarios and have obvious cost advantages and supply guarantees.
The international mainstream RF chip supplier models corresponding to the four chips are as follows:
The performance parameters of the four chips are as follows:：
GSP1P904AL (1.8-1.9GHz) covers the 3GPP - defined B3 and B9 bands, with typical performance of key indicators as follows:
GSP2P204AL (2.1-2.2GHz) covers the 3GPP - defined B1 and B66 bands, with typical performance of key indicators as follows:
GSP2P404AL (2.3-2.4GHz) covers the 3GPP - defined B30 and B40 bands, with typical performance of key indicators as follows:
GSP3P604AL (3.3-3.6GHz) covers part of the 3GPP - defined B22, B42, B52, N77, and N78 bands, with typical performance of key indicators as follows:
