Around 2004, the first Gallium Nitride High Electron Mobility Transistor (GaN HEMT) began to be commercially used. These transistors are commonly used in RF infrastructure that requires high efficiency and high voltage.

In 2008, the Gallium Nitride Metal Oxide Semiconductor Field - Effect Transistor (GaN MOSFET) formed on a silicon substrate was promoted. However, its usage rate was relatively low due to complex circuits and the lack of high - frequency ecosystem components.

In 2018, GaN was widely applied to fast charging, and since then, the charger has entered the GaN era.

On March 13, 2021, Xinhua News Agency published the "Outline of the 14th Five - Year Plan for National Economic and Social Development of the People's Republic of China and the Long - Range Objectives for 2035," which specifically proposed that wide - band - gap semiconductors such as silicon carbide and gallium nitride should achieve development in the field of "integrated circuits."

SDSX, as a private company committed to the development of compound semiconductors, closely follows the national development strategy and focuses on the third - generation semiconductor industry, forming a product layout centered on silicon - carbide - based gallium nitride and silicon - based gallium nitride. Recently, SDSX launched a series of silicon - based gallium nitride HEMT products. These products are particularly suitable for power - related application scenarios with high power density, ultra - high switching frequency, and high efficiency, and have been fully applied to the fast - charging field. Due to the natural advantages of the process materials, compared with silicon power devices, the switching frequency of silicon - based gallium nitride devices can be increased by 10 times. At the same time, the size of the matching passive devices can be greatly reduced. For example, the final power product, such as PD fast - charging, can reduce the size by 1/3.

The products launched by SDSX this time, GHHS065200AD and GHHS065400AD, are both N - channel 650V enhanced - mode HEMT power tubes. They have extremely low on - resistance, extremely low input and output capacitance, and zero reverse recovery charge. At present, the market's requirements for the efficiency of power products are getting higher and higher. Compared with competitors under different input voltage and output specifications, GHHS065200AD has improved efficiency in all aspects. At the same time, GHHS065200AD has fully passed the reliability test certification.

The quasi - resonant (QR) PD 65W Demo using GHHS065200AD has a mature solution and excellent performance, with a measured efficiency of up to 92%. It has passed conducted and radiated tests and obtained 3C certification, and can be fully commercialized.