The Latest generation Power Amplifiers with high power density frequency characteristics.
The Latest generation Power Amplifiers with high power density frequency characteristics.
Compare to LDMOS PA, GaN series PA has 77% efficiency and 20dB gain;
SDSX’s GaN series products are Pin-to-Pin compatible to international partners , and are superior in terms of performance.
In 2021,all 5G base station related GaN product lines will enter mass production. 
The 3rd-Gen Wide Band Gap Semiconductor AlGaN / GaN HEMT is the leading trend of 5G high-frequency and high-power communication for its superior characteristics.
SDSX’s GaN Power Amplifier products include Bare Die and Internal Matching Devices, with excellent characteristics in broadband, high efficiency and high gain.
GaN power amplifier (PA) has high efficiency, which effectively reduces the Thermal Design Power(TDP) of 5G base stations.The range of power for Bare Die products is 8w-100w, which is eligible for ultra wide band applications from dc to 6Ghz.
The Internal Matching Amplifier exceeds all the requirements for 5G 32T and 64T mass MIMO applications.
Power of products below 6G: 8W, 15W, 20W, 35W, 48W, 65W, 75W, 80W, 100W (We do customized products!)
We provide industrial grade Power amplifier (PA), Low Noise Amplifier (LNA) for equipment manufacturers in wireless infrastructure, point-to-point radio, satellite communication and other scenarios.
We offer Separate and Integrated core solutions, including Power Amplifier (PA), Low Noise Amplifier (LNA), Switch Solutions.
