Power amplifier chips are core components in wireless communication systems, and their performance directly determines the communication range and signal quality. There is a strong market demand for high-linearity millimeter-wave power amplifier chips in fields such as satellite communication and aerospace telemetry. GaN power amplifier chips are increasingly being used for their good linearity, high output power, high efficiency, and wide bandwidth.

SDSX has introduced a GaN power amplifier chip, model SX1909, operating in the 27–31 GHz frequency range. The chip measures only 3.6 mm x 3.1 mm. Under continuous wave operation, it has a small-signal gain of over 20 dB, an output power of more than 10 W, and a saturated efficiency greater than 25%. When backed off to an output power of 5 W, the third-order intermodulation coefficient is better than -25 dBc. The performance of this chip has reached an advanced industry level and has already been delivered in volume.