Power amplifier chips are key components in RF transmitter systems. The demand for high-linearity, high-power solid-state power amplifier chips is becoming increasingly urgent in fields such as aerospace telemetry and satellite communication. GaN power devices, known for their high output power, high efficiency, and wide bandwidth, are being used more and more. GaN power MMICs for wireless communication applications are also required to have high linearity and high back-off efficiency.

SDSX has introduced a GaN power amplifier chip, model SX1909, operating in the 27–31 GHz frequency range. The chip measures only 3.6 mm x 3.1 mm. Under continuous wave operation, it has a small-signal gain of over 20 dB, an output power of more than 10 W, and a saturated efficiency greater than 25%. When backed off to an output power of 5 W, the third-order intermodulation coefficient is better than -25 dBc. The performance of this chip has reached an advanced industry level and has already been delivered in volume.